ANNEALING OF ELECTRON BOMBARDMENT DAMAGE IN SILICON CRYSTALS

[1] Brinkman JA, 1956, AM J PHYS, V24, P246, DOI [10.1119/1.1934201, DOI 10.1119/1.1934201]

[2] RADIATION EFFECTS IN SOLIDS [J]. ANNUAL REVIEW OF NUCLEAR SCIENCE, 1953, 2 : 187 - 220

[3] FAN HY, 1956, IRRADIATION SEMICOND

[4] FLETCHER RC, 1953, PHYS REV, V95, P585

[5] GLEN JW, 1956, ADV PHYSICS, V4, P318

[6] TRANSIENT RESPONSE OF A P-N JUNCTION [J]. JOURNAL OF APPLIED PHYSICS, 1954, 25 (09) : 1148 - 1154

[7] ELECTRON VOLTAIC STUDY OF ELECTRON BOMBARDMENT DAMAGE AND ITS THRESHOLDS IN GE AND SI [J]. PHYSICAL REVIEW, 1955, 98 (06): : 1861 - 1863

[8] Seitz F., 1956, SOLID STATE PHYS, P307

[9] Seitz F., 1952, PHYS TODAY, V5, P6, DOI [10.1063/1.3067657, DOI 10.1063/1.3067657]

[10] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842

[1] Brinkman JA, 1956, AM J PHYS, V24, P246, DOI [10.1119/1.1934201, DOI 10.1119/1.1934201]

[2] RADIATION EFFECTS IN SOLIDS [J]. ANNUAL REVIEW OF NUCLEAR SCIENCE, 1953, 2 : 187 - 220

[3] FAN HY, 1956, IRRADIATION SEMICOND

[4] FLETCHER RC, 1953, PHYS REV, V95, P585

[5] GLEN JW, 1956, ADV PHYSICS, V4, P318

[6] TRANSIENT RESPONSE OF A P-N JUNCTION [J]. JOURNAL OF APPLIED PHYSICS, 1954, 25 (09) : 1148 - 1154

[7] ELECTRON VOLTAIC STUDY OF ELECTRON BOMBARDMENT DAMAGE AND ITS THRESHOLDS IN GE AND SI [J]. PHYSICAL REVIEW, 1955, 98 (06): : 1861 - 1863

[8] Seitz F., 1956, SOLID STATE PHYS, P307

[9] Seitz F., 1952, PHYS TODAY, V5, P6, DOI [10.1063/1.3067657, DOI 10.1063/1.3067657]

[10] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842