The Letter describes InGaAsP/InP 1.55 mum distributed Bragg reflector lasers monolithically integrated with a laterally tapered waveguide on the output facet. The tapered waveguide region of the devices has a thick partially clad p-InP layer grown by selective growth. The growth and fabrication processing steps were the same as those used to make conventional DBR laser diodes. The lasers demonstrate good lasing characteristics, low-loss coupling of less than 2.8dB and +/- 2 mum misalignment tolerance with a flat-end singlemode fibre in both the lateral and vertical directions.