A SENSITIVE METHOD FOR MEASURING OPTICAL SCATTERING IN SILICON

被引：9

作者：

SCHWUTTKE, GH

WEINREICH, OA

KECK, PH

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1958年 / 105卷 / 12期

关键词：

D O I：

10.1149/1.2428706

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：706 / 709

页数：4

共 10 条

[1]

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[2]

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FULLER, CS ;

LOGAN, RA .

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[4] ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON [J].

KAISER, W .

PHYSICAL REVIEW, 1957, 105 (06) :1751-1756

[5] OXYGEN CONTENT OF SILICON SINGLE CRYSTALS [J].

KAISER, W ;

KECK, PH .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) :882-887

[6]

KECK PH, 1946, OPTIK, V1, P169

[7] BEHAVIOR OF OXYGEN IN PLASTICALLY DEFORMED SILICON [J].

LEDERHANDLER, S ;

PATEL, JR .

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[8] EFFECT OF OXYGEN ON ETCH-PIT FORMATION IN SILICON [J].

LOGAN, RA ;

PETERS, AJ .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) :1419-1423

[9] INFRARED REFRACTIVE INDEXES OF SILICON GERMANIUM AND MODIFIED SELENIUM GLASS [J].

SALZBERG, CD ;

VILLA, JJ .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1957, 47 (03) :244-246

[10] JUNCTION DELINEATION IN SILICON BY GOLD CHEMIPLATING [J].

SILVERMAN, SJ ;

BENN, DR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (03) :170-172

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