ION-IMPLANTATION EFFECTS IN INSULATORS AND THE LONG-TERM STABILITY OF RADIOACTIVE-WASTE STORAGE MATERIALS

被引：3

作者：

DRAN, JC

LANGEVIN, Y

MAURETTE, M

PETIT, JC

VASSENT, B

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1981年 / 182卷 / APR期

关键词：

D O I：

10.1016/0029-554X(81)90804-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：741 / 746

页数：6

共 13 条

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