RESONANT RESISTANCE ENHANCEMENT IN DOUBLE-QUANTUM-WELL GAAS-ALXGA1-XAS HETEROSTRUCTURES

被引：16

作者：

KUROBE, A ^{[1
]}

CASTLETON, IM ^{[1
]}

LINFIELD, EH ^{[1
]}

GRIMSHAW, MP ^{[1
]}

BROWN, KM ^{[1
]}

RITCHIE, DA ^{[1
]}

PEPPER, M ^{[1
]}

JONES, GAC ^{[1
]}

机构：

[1] TOSHIBA CAMBRIDGE RES CTR,CAMBRIDGE CB4 4W3,CAMBS,ENGLAND

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.50.8024

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a study of electron transport in coupled quantum-well structures controlled by both front and back gates. The resonant resistance enhancement is systematically investigated by varying the mobility in each quantum well. We show that a large mobility ratio between the two wells gives a large resonant resistance enhancement only when the level broadening is smaller than the symmetric-antisymmetric gap of the coupled system.

引用

页码：8024 / 8027

页数：4

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