EFFECT OF ELASTIC STRESS ON SOME ELECTRONIC PROPERTIES OF INDIUM

被引:15
作者
OVERCASH, DR
SKOVE, MJ
STILLWELL, EP
机构
[1] Department of Physics, Clemson University, Clemson
来源
PHYSICAL REVIEW | 1969年 / 187卷 / 02期
关键词
D O I
10.1103/PhysRev.187.570
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have measured the effect of elastic stress to 0.3 kbar on the resistance at room and helium temperatures and on the superconducting transition temperature of In whiskers. These whiskers have diameters 1 μ of about and axes parallel to a closest-packed or <101> direction. Tcσ is 51±7 mK/kbar, in disagreement with results obtained by measuring the change in length of In crystals as they pass through the superconducting transition. At room temperature, Δρρσ=a+bσ, where a=(-0.4±0.2)×10-5 bars-1 and b=(14±2)×10-9 bar-2. © 1969 The American Physical Society.
引用
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页码:570 / +
页数:1
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