TIN FILM FORMATION BY PLASMA CHEMICAL VAPOR-DEPOSITION AND ITS PLASMA DIAGNOSTICS

TiN films were deposited by plasma chemical vapor deposition utilizing d.c. glow discharge onto metal substrates at 800 K from both gas mixtures of TiCl4-H-2-N2 and TiCl4-H-2-NH3. Plasma diagnostic measurements were carried out using optical emission spectroscopy and quadrupole mass spectrometry. The dependence of TiN film properties and the plasma species on the plasma power input was investigated. TiN films of fine properties were found to form at low plasma power inputs with a higher deposition rate in the plasma of TiCl4-H-2-NH3 than in the plasma of TiCl4-H-2-N2. The difference between the reactivity of N2 and that of NH3 in the plasma was examined and the reactive species believed to play important roles in the TiN film formation reaction chain were identified.