TRANSPORT IN RELAXATION SEMICONDUCTORS

[1] THEORIES AND MODELS OF AMORPHOUS STATE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (01): : 113 - &

[2] DOUBLE INJECTION IN DEEP-LYING IMPURITY SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 369 - &

[3] CONDUCTION MECHANISM OF SELF-COMPENSATED-HIGHLY DISORDERED SEMICONDUCTORS (A POSSIBLE MODEL FOR SEMICONDUCTING GLASSES) .I. AMBIPOLAR CONDUCTIVITY [J]. PHYSICA STATUS SOLIDI, 1969, 34 (02): : 721 - &

[4] CONDUCTION MECHANISM OF HIGHLY DISORDERED SEMICONDUCTORS (A POSSIBLE MODEL FOR SEMICONDUCTING GLASSES) .2. INFLUENCE OF CHARGED DEFECTS [J]. PHYSICA STATUS SOLIDI, 1969, 34 (02): : 733 - &

[5] CASEY HC, 1968, T METALL SOC AIME, V242, P406

[6] CASEY HW, UNPUBLISHED

[7] COHEN MH, 1970, P S SEMICONDUCTOR EF, P432

[8] COHEN MH, 1970, AMORPHOUS LIQUID SEM, P391

[9] SPACE-CHARGE LIMITED HOLE CURRENT IN GERMANIUM [J]. PHYSICAL REVIEW, 1953, 90 (05): : 759 - 763

[10] DOREMUS W, 1970, P S SEMICONDUCTOR EF, P444

[1] THEORIES AND MODELS OF AMORPHOUS STATE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (01): : 113 - &

[2] DOUBLE INJECTION IN DEEP-LYING IMPURITY SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 369 - &

[3] CONDUCTION MECHANISM OF SELF-COMPENSATED-HIGHLY DISORDERED SEMICONDUCTORS (A POSSIBLE MODEL FOR SEMICONDUCTING GLASSES) .I. AMBIPOLAR CONDUCTIVITY [J]. PHYSICA STATUS SOLIDI, 1969, 34 (02): : 721 - &

[4] CONDUCTION MECHANISM OF HIGHLY DISORDERED SEMICONDUCTORS (A POSSIBLE MODEL FOR SEMICONDUCTING GLASSES) .2. INFLUENCE OF CHARGED DEFECTS [J]. PHYSICA STATUS SOLIDI, 1969, 34 (02): : 733 - &

[5] CASEY HC, 1968, T METALL SOC AIME, V242, P406

[6] CASEY HW, UNPUBLISHED

[7] COHEN MH, 1970, P S SEMICONDUCTOR EF, P432

[8] COHEN MH, 1970, AMORPHOUS LIQUID SEM, P391

[9] SPACE-CHARGE LIMITED HOLE CURRENT IN GERMANIUM [J]. PHYSICAL REVIEW, 1953, 90 (05): : 759 - 763

[10] DOREMUS W, 1970, P S SEMICONDUCTOR EF, P444