CHARACTERISTICS IN INGAAS-INP AVALANCHE PHOTO-DIODES WITH SEPARATED ABSORPTION AND MULTIPLICATION REGIONS

被引：43

作者：

SUSA, N

NAKAGOME, H

ANDO, H

KANBE, H

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1981年 / 17卷 / 02期

关键词：

D O I：

10.1109/JQE.1981.1071059

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：243 / 250

页数：8

共 31 条

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[3] INGAAS-INP SEPARATED ABSORPTION AND MULTIPLICATION REGIONS AVALANCHE PHOTO-DIODE USING LIQUID-PHASE AND VAPOR-PHASE EPITAXIES [J].

ANDO, H ;

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SUSA, N ;

KANBE, H .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :250-254

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[5] IONIZATION COEFFICIENTS OF ELECTRONS AND HOLES IN INP [J].

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[6]

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ITO M, UNPUBLISHED

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