PHOTOCOLLECTION EFFICIENCY AND INTERFACE CHARGES OF MBE-GROWN ABRUPT P(GAAS)-N(AL0.33GA0.67AS) HETEROJUNCTIONS

被引：28

作者：

KROEMER, H ^{[1
]}

CHIEN, WY ^{[1
]}

CASEY, HC ^{[1
]}

CHO, AY ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 08期

关键词：

D O I：

10.1063/1.90527

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：749 / 751

页数：3

共 9 条

[1]

CASEY HC, 1978, HETEROSTRUCTURE LA A, pCH4

[2] SIMPLIFIED MODEL FOR GRADED-GAP HETEROJUNCTIONS [J].

CHEUNG, DT ;

CHIANG, SY ;

PEARSON, GL .

SOLID-STATE ELECTRONICS, 1975, 18 (03) :263-266

[3] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES [J].

DINGLE, R ;

WIEGMANN, W ;

HENRY, CH .

PHYSICAL REVIEW LETTERS, 1974, 33 (14) :827-830

[4]

DINGLE R, UNPUBLISHED

[5]

Dingle R, 1975, FESTKORPERPROBLEME, V15, P21

[6] AUGER PROFILING STUDIES OF LPE N-ALXGA1-XAS-N-GAAS HETEROJUNCTIONS AND ABSENCE OF RECTIFICATION [J].

GARNER, CM ;

SHEN, YD ;

SU, CY ;

PEARSON, GL ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1480-1482

[7]

Merzbacher E, 1970, QUANTUM MECH, P129

[8] N-N SEMICONDUCTOR HETEROJUNCTIONS [J].

OLDHAM, WG ;

MILNES, AG .

SOLID-STATE ELECTRONICS, 1963, 6 (02) :121-132

[9] GRADED-GAP ALXGA1-XAS-GAAS HETEROJUNCTION [J].

WOMAC, JF ;

REDIKER, RH .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) :4129-&

← 1 →