ANTIREFLECTION PROPERTIES OF INDIUM TIN OXIDE (ITO) ON SILICON FOR PHOTO-VOLTAIC APPLICATIONS

被引：19

作者：

CHEEK, G ^{[1
]}

GENIS, A ^{[1
]}

DUBOW, JB ^{[1
]}

PAIVERNEKER, VR ^{[1
]}

机构：

[1] INDIAN INST SCI,DEPT INORGAN & PHYS CHEM,BANGALORE 560012,INDIA

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 07期

关键词：

D O I：

10.1063/1.91184

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The short-circuit current density (Jsc) of indium tin oxide (ITO/silicon solar cells has been shown both theoretically and experimentally to be a function of the thickness of the ion beam sputtered ITO layer. These results can be accounted for by computing the optical reflection from the ITO/silicon interface.

引用

页码：495 / 497

页数：3

共 8 条

[1] FABRICATION AND CHARACTERIZATION OF INDIUM TIN OXIDE (ITO) POLYCRYSTALLINE SILICON SOLAR-CELLS
CHEEK, G
INOUE, N
GOODNICK, S
GENIS, A
WILMSEN, C
DUBOW, JB
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 643 - 645
[2] CHEEK G, 1979, THESIS COLORADO STAT
[3] CHEEK G, UNPUBLISHED
[4] DUBOW J, 1979, J APPL PHYS, V50, P2832
[5] EFFICIENT PHOTOVOLTAIC HETEROJUNCTIONS OF INDIUM TIN OXIDES ON SILICON
DUBOW, JB
BURK, DE
SITES, JR
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (08) : 494 - 496
[6] INDIUM TIN OXIDE-COATED SILICON AS A SELECTIVE ABSORBER
GOLDNER, RB
HASKAL, HM
[J]. APPLIED OPTICS, 1975, 14 (10): : 2328 - 2329
[7] GOODNICK S, COMMUNICATION
[8] SHEWCHUN J, 1978, J APPL PHYS, V49, P865

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