ELECTRON-BEAM LITHOGRAPHY USING MEBES-IV

被引:10
作者
ABBOUD, F
GESLEY, M
COLBY, D
COMENDANT, K
DEAN, R
ECKES, W
MCCLURE, D
PEARCEPERCY, H
PRIOR, R
WATSON, S
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 06期
关键词
D O I
10.1116/1.585993
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The lithographic performance of the MEBES(R) IV maskmaker is described. This raster-scan electron beam lithography system automates the thermal field emission (TFE) column and makes a number of advances in the electronics and software control subsystems to achieve the stability and accuracy sufficient for 64-Mbit production and 256-Mbit development. Key module developments are highlighted, including TFE column vibration reduction, column setup automation, 160 MHz blanking at a high slew rate, low noise, and increased linearity of the deflection control electronics, and multipoint system temperature control. Data on lithographic quality is presented, as well as GHOST(TM) proximity correction results for 1x maskmaking applications with 0.2 mum minimum feature sizes.
引用
收藏
页码:2734 / 2742
页数:9
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