THE EFFECT OF ULTRAVIOLET-RADIATION ON A ZNS-TB THIN-FILM ELECTROLUMINESCENT DEVICE

被引：3

作者：

KONG, W

SOLANKI, R

机构：

[1] Department of Electrical Engineering and Applied Physics, Oregon Graduate Institute, Portland, OR 97291-1000, 20000 NW Walker Road

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 07期

关键词：

D O I：

10.1063/1.356139

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of UV laser radiation on the emission of a ZnS:Tb thin film electroluminescent (EL) device has been investigated. It was found that the EL emission can be enhanced near threshold and attenuated at higher voltages by irradiating the device with UV radiation from an argon ion laser. It is shown that these effects are related to the photogenerated carriers that alter transport and build up of charge and the electric field. Both the charge and the field have been determined in real time to examine the enhancement and attenuation of the EL emission.

引用

页码：3311 / 3315

页数：5

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