THE COMPOSITION OF OCTAHEDRON STRUCTURES THAT ACT AS AN ORIGIN OF DEFECTS IN THERMAL SIO2 ON CZOCHRALSKI SILICON

被引：135

作者：

ITSUMI, M ^{[1
]}

AKIYA, H ^{[1
]}

UEKI, T ^{[1
]}

TOMITA, M ^{[1
]}

YAMAWAKI, M ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, INTERDISCIPLINARY RES LABS, MUSASHINO, TOKYO 180, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 10期

关键词：

D O I：

10.1063/1.360603

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Recently, octahedron structures have been found in the Czochralski-silicon substrate surface layer just under the oxide defects. An attempt is made to characterize these structures by analysis with transmission electron microscopy and energy-dispersive x-ray spectroscopy. Several results indicate that the structure is full of vacancies. This is contrary to previously reported results suggesting that the octahedron structures found in Si bulb are filled with amorphous SiO2. A modal for the formation of an octahedron structure with many vacancies is proposed. (C) 1995 American Institute of Physics.

引用

页码：5984 / 5988

页数：5

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