BROAD BEAM EXTRACTION FROM A NEW SPUTTERING-TYPE ION-SOURCE USING AN ELECTRIC MIRROR

被引：6

作者：

MATSUOKA, M

ONO, K

机构：

[1] NTT Opto-electronics Laboratories, Tokai, Ibaraki

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1990年 / 8卷 / 03期

关键词：

D O I：

10.1116/1.576813

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A new sputtering-type metal-ion source for ion beam deposition was developed by using an electric mirror. Ion beams with an area of 80 cm2 were extracted from this source. The ion energy was controlled over a range from 50 to 500 eV. Ions with 200 eV energy were extracted with an average current density of more than 1 mA/cm2. The fraction of ions in the extracted metal reached about 30%. The fraction of metal ions in the total extracted ions, including Ar+ and metal ions, exceeded 10%. These fractions of metal ions monotonically increased with sputtering power. Both Al+ and Fe+ ions were extracted from this apparatus and deposited on the substrate. © 1990, American Vacuum Society. All rights reserved.

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页码：1840 / 1843

页数：4

相关论文

共 14 条

[1] ION-BEAM DEPOSITION OF THIN FILMS OF DIAMONDLIKE CARBON [J].

AISENBERG, S ;

CHABOT, R .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) :2953-+

[2]

BREWER GR, 1971, IEEE SPECTRUM, V23

[3]

HOSHI Y, 1982, T I ELECTRON COMMU C, V65, P490

[4] TECHNOLOGY AND APPLICATIONS OF BROAD-BEAM ION SOURCES USED IN SPUTTERING .1. ION-SOURCE TECHNOLOGY [J].

KAUFMAN, HR ;

CUOMO, JJ ;

HARPER, JME .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (03) :725-736

[5] DEPOSITION OF THIN-FILMS USING AN ISOTOPE SEPARATOR [J].

LAWSON, RPW ;

FREEMAN, JH ;

COLLIGON, JS ;

GRANT, WA ;

NOBES, MJ ;

WILLIAMS, JS .

NUCLEAR INSTRUMENTS & METHODS, 1975, 131 (03) :567-568

[6] IONIZED BEAM DOPING IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS [J].

MATSUNAGA, N ;

SUZUKI, T ;

TAKAHASHI, K .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) :5710-5713

[7] DENSE-PLASMA PRODUCTION FOR HIGH-RATE SPUTTERING BY MEANS OF AN ELECTRIC MIRROR [J].

MATSUOKA, M ;

ONO, K .

APPLIED PHYSICS LETTERS, 1988, 53 (21) :2025-2027

[8] DENSE-PLASMA PRODUCTION AND FILM DEPOSITION BY NEW HIGH-RATE SPUTTERING USING AN ELECTRIC MIRROR [J].

MATSUOKA, M ;

ONO, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (04) :2652-2657

[9] A NEW SPUTTERING-TYPE ELECTRON-CYCLOTRON RESONANCE MICROWAVE PLASMA USING AN ELECTRIC MIRROR AND HIGH-RATE DEPOSITION [J].

MATSUOKA, M ;

ONO, K .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (11) :4403-4409

[10] A LOW-ENERGY, ULTRAHIGH-VACUUM, SOLID-METAL ION-SOURCE FOR ACCELERATED-ION DOPING DURING MOLECULAR-BEAM EPITAXY [J].

ROCKETT, A ;

BARNETT, SA ;

GREENE, JE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :306-313