共 12 条
[2]
INTERFACE FORMATION OF GAAS WITH SI(100), SI(111), AND GE(111) - CORE-LEVEL SPECTROSCOPY FOR MONOLAYER COVERAGES OF GAAS, GA, AND AS
[J].
PHYSICAL REVIEW B,
1987, 36 (18)
:9569-9580
[3]
CHRISTENSEN N, COMMUNICATION
[5]
GRANT RW, 1978, J VAC SCI TECHNOL, V154, P1451
[6]
SEMICONDUCTOR CORE-LEVEL TO VALENCE-BAND MAXIMUM BINDING-ENERGY DIFFERENCES - PRECISE DETERMINATION BY X-RAY PHOTOELECTRON-SPECTROSCOPY
[J].
PHYSICAL REVIEW B,
1983, 28 (04)
:1965-1977
[7]
MANN JB, ATOMIC STRUCTURE CAL, V1
[10]
Shirley D. A., 1978, TOP APPL PHYS, V26, P193