RELATIVE CORE LEVEL DEFORMATION POTENTIALS IN STRAINED LAYER HETEROJUNCTIONS

被引:11
作者
GRANT, RW
WALDROP, JR
KRAUT, EA
HARRISON, WA
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期
关键词
D O I
10.1116/1.585002
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:736 / 740
页数:5
相关论文
共 12 条
[1]   ELECTRONIC-STRUCTURE OF ZNS, ZNSE, ZNTE, AND THEIR PSEUDOBINARY ALLOYS [J].
BERNARD, JE ;
ZUNGER, A .
PHYSICAL REVIEW B, 1987, 36 (06) :3199-3228
[2]   INTERFACE FORMATION OF GAAS WITH SI(100), SI(111), AND GE(111) - CORE-LEVEL SPECTROSCOPY FOR MONOLAYER COVERAGES OF GAAS, GA, AND AS [J].
BRINGANS, RD ;
OLMSTEAD, MA ;
UHRBERG, RIG ;
BACHRACH, RZ .
PHYSICAL REVIEW B, 1987, 36 (18) :9569-9580
[3]  
CHRISTENSEN N, COMMUNICATION
[4]   OBSERVATION OF ORIENTATION DEPENDENCE OF INTERFACE DIPOLE ENERGIES IN GE-GAAS [J].
GRANT, RW ;
WALDROP, JR ;
KRAUT, EA .
PHYSICAL REVIEW LETTERS, 1978, 40 (10) :656-659
[5]  
GRANT RW, 1978, J VAC SCI TECHNOL, V154, P1451
[6]   SEMICONDUCTOR CORE-LEVEL TO VALENCE-BAND MAXIMUM BINDING-ENERGY DIFFERENCES - PRECISE DETERMINATION BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J].
KRAUT, EA ;
GRANT, RW ;
WALDROP, JR ;
KOWALCZYK, SP .
PHYSICAL REVIEW B, 1983, 28 (04) :1965-1977
[7]  
MANN JB, ATOMIC STRUCTURE CAL, V1
[8]   PIEZO-ELECTROREFLECTANCE IN GE GAAS AND SI [J].
POLLAK, FH ;
CARDONA, M .
PHYSICAL REVIEW, 1968, 172 (03) :816-&
[9]   CORE-LEVEL PHOTOEMISSION MEASUREMENTS OF VALENCE-BAND OFFSETS IN HIGHLY STRAINED HETEROJUNCTIONS - SI-GE SYSTEM [J].
SCHWARTZ, GP ;
HYBERTSEN, MS ;
BEVK, J ;
NUZZO, RG ;
MANNAERTS, JP ;
GUALTIERI, GJ .
PHYSICAL REVIEW B, 1989, 39 (02) :1235-1241
[10]  
Shirley D. A., 1978, TOP APPL PHYS, V26, P193