ORGANOSOLUBLE, SEGMENTED RIGID-ROD POLYIMIDE FILMS .2. PROPERTIES FOR MICROELECTRONIC APPLICATIONS

被引:57
作者
ARNOLD, FE
CHENG, SZD
HSU, SLC
LEE, CJ
HARRIS, FW
LAU, SF
机构
[1] UNIV AKRON,COLL POLYMER SCI & POLYMER ENGN,INST POLYMER SCI,AKRON,OH 44325
[2] HERCULES INC,RES CTR,WILMINGTON,DE 19894
[3] UNIV AKRON,COLL POLYMER SCI & POLYMER ENGN,DEPT POLYMER SCI,AKRON,OH 44325
关键词
COEFFICIENT OF THERMAL EXPANSION; DIMENSIONAL STABILITY; GLASS TRANSITION TEMPERATURE; MICROELECTRONIC APPLICATION; RELATIVE PERMITTIVITY; SEGMENTED RIGID-ROD POLYIMIDE FILM; THERMAL AND THERMOOXIDATIVE STABILITY; THERMOGRAVIMETRIC MASS SPECTROSCOPY; THERMOMECHANICAL MEASUREMENT;
D O I
10.1016/0032-3861(92)90798-2
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
The essential properties of polyimide films of importance in microelectronic applications are thermal and thermo-oxidative stability, dimensional stability, glass transition behaviour and the relative permittivity (dielectric constant epsilon'). A segmented rigid-rod polyimide was synthesized from 3,3',4,4'-biphenyltetracarboxylic dianhydride (BPDA) and 2,2'-bis(trifluoromethyl)-4,4'-diaminobiphenyl (PFMB) in order to develop new materials for microelectronic applications. The thermal and thermo-oxidative stability were investigated by determining the thermal degradation activation energy in air (210 kJ mol-1) and in nitrogen (303 kJ mol-1). The thermal stability was further studied through thermogravimetry-mass spectroscopy. The coefficient of thermal expansion, which indicates the dimensional stability, was measured via a tension mode of a thermomechanical analyser and doubly extrapolated to zero stresses, and was 6.98 x 10(-6)-degrees-C-1 for the BPDA-PFMB films. The glass transition temperature, measured thermomechanically, was found to be 287-degrees-C. The dielectric constant for the films, measured after ageing at 50% relative humidity for 48 h at 23-degrees-C, was between 2.8 and 2.9 in a frequency range from 0.1 kHz to 1 MHz. The temperature and frequency dependence of the dielectric behaviour is also discussed.
引用
收藏
页码:5179 / 5185
页数:7
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