LUMINESCENCE OF BOUND EXCITONS IN TELLURIUM-DOPED ZINC SULFIDE CRYSTALS

被引：49

作者：

FUKUSHIMA, T ^{[1
]}

SHIONOYA, S ^{[1
]}

机构：

[1] UNIV TOKYO, INST SOLID STATE PHYS, MINATO, TOKYO, JAPAN

来源：

关键词：

D O I：

10.1143/JJAP.12.549

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：549 / 556

页数：8

共 15 条

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HAANSTRA, JH
[J]. PHYSICS LETTERS, 1964, 11 (02): : 97 - 98
[2] ATEN AC, 1965, PHILIPS RES REP, V20, P395
[3] THE PHASE DIAGRAM OF ZINC TELLURIDE
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FISCHER, AG
[J]. SOLID STATE COMMUNICATIONS, 1964, 2 (08) : 217 - 218
[4] FLUORESCENT DECAY TIMES OF EXCITONS BOUND TO ISOELECTRONIC TRAPS IN GAP AND ZNTE
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[J]. PHYSICAL REVIEW, 1967, 154 (03): : 763 - &
[5] OPTICAL PROPERTIES OF TELLURIUM AS AN ISOELECTRONIC TRAP IN CADMIUM SULFIDE
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[6] ZEEMAN EFFECT AND CRYSTAL-FIELD SPLITTING OF EXCITONS BOUND TO ISOELECTRONIC BISMUTH IN GALLIUM PHOSPHIDE
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[J]. PHYSICAL REVIEW, 1969, 185 (03): : 1064 - &
[7] ISOELECTRONIC DONORS AND ACCEPTORS
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THOMAS, DG
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[J]. PHYSICAL REVIEW LETTERS, 1966, 17 (06) : 312 - &
[8] Iseler G. W., 1970, Journal of Luminescence, V3, P1, DOI 10.1016/0022-2313(70)90002-5
[9] KLICK CC, 1957, SOLID STATE PHYSICS, V5
[10] ISOELECTRONIC OXYGEN TRAP IN ZNTE
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[J]. PHYSICAL REVIEW, 1968, 176 (03): : 961 - &