PRESSURE-DEPENDENCE OF RAMAN-SCATTERING IN AGGASE2

被引：4

作者：

CHOI, IH

YU, PY

机构：

[1] LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720

[2] CHUNG AN UNIV,DEPT PHYS,SEOUL,SOUTH KOREA

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 90卷 / 06期

关键词：

D O I：

10.1016/0038-1098(94)90795-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The pressure dependence of several one-phonon Raman modes in AgGaSe2 has been measured by using a dye laser tuned near the bandgap exciton at low temperatures to enhance their Raman intensities. Most of the modes exhibit large nonlinear pressure dependence. Although none of the observed modes showed any softening at pressures approaching the structural phase transition value, the GAMMA5L(W3) mode at 139 cm-1 was found to broaden anomalously with pressure.

引用

页码：345 / 348

页数：4

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