PHOTOYIELD MEASUREMENTS OF CVD DIAMOND

被引：18

作者：

EIMORI, N

MORI, Y

HATTA, A

ITO, T

HIRAKI, A

机构：

[1] Department of Electrical Engineering, Osaka University, Suita, Osaka

来源：

关键词：

SURFACE; CHARACTERIZATION; OPTOELECTRONIC PROPERTIES;

D O I：

10.1016/0925-9635(94)05324-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the electron affinity of the (100)-oriented single-crystal chemical vapor deposited (CVD) diamond surfaces. The photoyield spectra of (100) surfaces exposed to hydrogen plasma start from 5.4 eV incident photon energy, which is lower than the band gap of diamond (5.5 eV), using UV synchrotron radiation. This shows that the vacuum level at the (100) surface exists below the conduction band of the bulk. Also, the electron affinity of the (100) surface is found to be negative from changes in elastic and secondary electron emission peak intensities.

引用

页码：806 / 808

页数：3

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