MASS-SPECTROMETRY STUDY OF ZNS ATOMIC LAYER EPITAXY PROCESS

被引:16
作者
HYVARINEN, J
SONNINEN, M
TORNQVIST, R
机构
关键词
D O I
10.1016/0022-0248(90)90797-O
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:695 / 699
页数:5
相关论文
共 14 条
[1]   CHEMICAL PROCESSES IN VAPOR-DEPOSITION OF SILICON .1. DEPOSITION FROM SICL2H2 AND ETCHING BY HCL [J].
BAN, VS ;
GILBERT, SL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) :1382-1388
[3]  
DOI A, 1986, APPL PHYS LETT, V49, P785, DOI 10.1063/1.97546
[4]  
HASPEKLO H, 1986, J CRYSTAL GROWTH, V77, P74
[5]   MOLECULAR LAYER EPITAXY [J].
NISHIZAWA, J ;
ABE, H ;
KURABAYASHI, T .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) :1197-1200
[6]  
PAKKANEN TA, 1987, SURFACE SCI, V88, P456
[7]   ATOMIC LAYER EPITAXY OF CDTE ON THE POLAR-(111)A AND B(111)-SURFACES OF CDTE SUBSTRATES [J].
PESSA, M ;
JYLHA, O ;
HERMAN, MA .
JOURNAL OF CRYSTAL GROWTH, 1984, 67 (02) :255-260
[8]  
Suntola T., 1980, SID International Symposium. Digest of Technical Papers, P108
[9]  
SUNTOLA T, 1985, ANNU REV MATER SCI, V15, P177
[10]  
Suntola T, 1977, U.S. Patent, Patent No. [4058430, 4,058,430]