THERMAL BREAKDOWN AND SWITCHING IN CHALCOGENIDE GLASSES

被引:17
作者
BURTON, P
BRANDER, RW
机构
[1] The General Electric Company Limited, Central Research Laboratories, Hirst Research Centre, Wembley
关键词
D O I
10.1080/00207216908900079
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Switching phenomena ha.ve been observed in a number of semiconducting glasses from the system. As, Se, Te, Tl. Two distinct switching phenomena were seen, one, a slow process which occurred in thick samples, and the other, a much faster process which occurred in thinner samples. Analyses are presented for two extreme cases of thermal switching (or breakdown). Comparison of the experimental results with the theoretical predictions indicates that the observed slow process is thermal in origin, whereas the faster process is non-thermal. © Taylor and Francis Group, LLC.
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页码:517 / &
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