ROLE OF 4-PHONON PROCESSES IN LATTICE THERMAL CONDUCTIVITY OF SILICON FROM 300 TO 1300 DEGREES K

被引：38

作者：

JOSHI, YP

TIWARI, MD

VERMA, GS

机构：

来源：

PHYSICAL REVIEW B-SOLID STATE | 1970年 / 1卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.1.642

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：642 / &

共 34 条

[1] APPARATUS FOR THE MEASUREMENT OF THE THERMAL DIFFUSIVITY OF SOLIDS AT HIGH TEMPERATURES [J].

ABELES, B ;

CODY, GD ;

BEERS, DS .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (09) :1585-1592

[2] THERMAL CONDUCTIVITY OF GE-SI ALLOYS AT HIGH TEMPERATURES [J].

ABELES, B ;

BEERS, DS ;

DISMUKES, JP ;

CODY, GD .

PHYSICAL REVIEW, 1962, 125 (01) :44-&

[3] THERMAL CONDUCTIVITY OF GE-SI ALLOYS AT HIGH-TEMPERATURES [J].

BHANDARI, CM ;

VERMA, GS .

PHYSICAL REVIEW, 1965, 138 (1A) :A288-&

[4]

BLATT FJ, 1957, SOLID STATE PHYSICS, V4

[5] LATTICE VIBRATIONS IN SILICON AND GERMANIUM [J].

BROCKHOUSE, BN .

PHYSICAL REVIEW LETTERS, 1959, 2 (06) :256-258

[6] EFFECT OF DOPING ON ELASTIC CONSTANTS OF SILICON [J].

CSAVINSZKY, P ;

EINSPRUCH, NG .

PHYSICAL REVIEW, 1963, 132 (06) :2434-&

[7]

DRABBLE JR, 1961, THERMAL CONDUCTION S, P117

[8] THERMAL CONDUCTIVITY ELECTRICAL RESISTIVITY AND SEEBECK COEFFICIENT OF SILICON FROM 100 TO 1300 DEGREE K [J].

FULKERSON, W ;

MOORE, JP ;

WILLIAMS, RK ;

GRAVES, RS ;

MCELROY, DL .

PHYSICAL REVIEW, 1968, 167 (03) :765-+

[9] TEMPERATURE DEPENDENCE OF DENSITY-OF-STATES EFFECTIVE MASS AND ELECTRONIC AND PHONON CONTRIBUTIONS TO THERMAL RESISTANCE OF DOPED SI-GE ALLOYS AT HIGH TEMPERATURES [J].

GAUR, NKS ;

BHANDARI, CM ;

VERMA, GS .

PHYSICAL REVIEW, 1966, 144 (02) :628-&

[10] PHONON-ELECTRON SCATTERING IN N-TYPE GE AT LOW TEMPERATURES [J].

GAUR, NKS ;

VERMA, GS .

PHYSICAL REVIEW, 1967, 159 (03) :610-&

← 1 2 3 4 →