HARTREE-FOCK DENSITY OF STATES FOR EXTENDED SYSTEMS

被引:117
作者
MONKHORST, HJ [1 ]
机构
[1] UNIV UTAH,DEPT PHYS,SALT LAKE CITY,UT 84112
来源
PHYSICAL REVIEW B | 1979年 / 20卷 / 04期
关键词
D O I
10.1103/PhysRevB.20.1504
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The density of states (DOS) of extended systems, calculated at the rigorous Hartree-Fock (HF) level, can have a number of unphysical features. It is shown analytically that in partially filled band systems (crystals, thin films, polymers) the HF DOS vanishes at the Fermi energy, regardless of Fermi-surface shape. HF DOS will also vanish, in the (rare) event that an equienergetic surface S for an energy different from the Fermi energy coincides with the Fermi surface SF. Additional features such as shoulders, peaks, or near gaps can occur at energies with surfaces S close to SF. No HF-related zero DOS arises in filled-band extended systems. Published HF DOS are discussed. A detailed summary of expressions for crystal HF matrix elements in momentum representation is given. Their modification for thin films and polymers is indicated. © 1979 The American Physical Society.
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页码:1504 / 1513
页数:10
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