THE KINETICS OF HOLE-BURNING IN SEMICONDUCTOR-LASERS

It is shown that the nonequilibrium electron distributions of a lasing semiconductor can be calculated from a linearized Boltzmann equation for the intraband Coulomb-collision rate. A successive expansion for small momentum transfer yields an integro-differential equation, whose differential part is the usual Fokker-Planck equation. The additional integral part assures the conservation of the total momentum and energy of the electron gas. A formal solution of the resulting kinetic equation is given from which one can calculate the hole burned into the electron distribution by the laser field.