IRRADIATION DAMAGE IN GERMANIUM AND SILICON DUE TO ELECTRONS AND GAMMA RAYS

被引：82

作者：

CAHN, JH

机构：

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D O I：

10.1063/1.1735310

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1310 / 1316

页数：7

共 18 条

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