ROOM-TEMPERATURE STIMULATED EMISSION

被引：27

作者：

BURNS, G

NATHAN, MI

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1963年 / 7卷 / 01期

关键词：

D O I：

10.1147/rd.71.0072

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：72 / 73

页数：2

共 11 条

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[2] DIRECTIONALITY EFFECTS OF GAAS LIGHT-EMITTING DIODES .1. [J].

BURNS, G ;

LAFF, RA ;

BLUM, SE ;

DILL, FH ;

NATHAN, MI .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (01) :62-63

[3] INTERBAND TRANSITIONS AND MASER ACTION [J].

DUMKE, WP .

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[4] COHERENT LIGHT EMISSION FROM GAAS JUNCTIONS [J].

HALL, RN ;

CARLSON, RO ;

SOLTYS, TJ ;

FENNER, GE ;

KINGSLEY, JD .

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[5]

KEYES RJ, 1962, P IRE, V50, P1822

[6] DIRECTIONALITY EFFECTS OF GAAS LIGHT-EMITTING DIODES .2. [J].

LAFF, RA ;

DUMKE, WP ;

DILL, FH ;

BURNS, G .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (01) :63-65

[7] THRESHOLD RELATIONS AND DIFFRACTION LOSS FOR INJECTION LASERS [J].

LASHER, GJ .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (01) :58-61

[8] STIMULATED EMISSION OF RADIATION FROM GAAS P-N JUNCTIONS [J].

NATHAN, MI ;

DUMKE, WP ;

BURNS, G ;

DILL, FH ;

LASHER, G .

APPLIED PHYSICS LETTERS, 1962, 1 (03) :62-64

[9]

NATHAN MI, UNPUB APPLIED PHYSIC

[10]

PANKOVE JI, 1962, P IRE, V50, P1976

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