JOSEPHSON-JUNCTIONS USING POLYIMIDE LANGMUIR-BLODGETT-FILMS WITH A NB/AU/PI/ (PB-BI) STRUCTURE

被引:17
作者
KUBOTA, T
IWAMOTO, M
NOSHIRO, H
SEKINE, M
机构
[1] TOKYO INST TECHNOL,DEPT ELECT & ELECTR ENGN,2-12-1 O-OKAYAMA,MEGURO KU,TOKYO 152,JAPAN
[2] TOKYO INST TECHNOL,DEPT APPL ELECTR,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 3A期
关键词
POLYIMIDE; LB; JOSEPHSON JUNCTION;
D O I
10.1143/JJAP.30.L393
中图分类号
O59 [应用物理学];
学科分类号
摘要
We fabricated Josephson junctions with the structure of Nb/Au/PI/(Pb-Bi) using an ultrathin polyimide (PI) Langmuir- Blodgett film as an electrically insulating layer with neither the presence of native oxide layers formed on the base Nb layer nor the dissolution of the base-Nb/Au electrode during the imidization of PAA (Polyamic acid long alkylamine salts) films to produce PI LB films. A typical I-V characteristic of weakly-coupled Josephson junctions was found to be obtained.
引用
收藏
页码:L393 / L395
页数:3
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