OPTICAL ANISOTROPY IN GAAS/ALXGA1-XAS MULTIPLE-QUANTUM WELLS UNDER THERMALLY-INDUCED UNIAXIAL STRAIN

被引：40

作者：

SHEN, H

WRABACK, M

PAMULAPATI, J

NEWMAN, PG

DUTTA, M

LU, Y

KUO, HC

机构：

[1] GEOCENTERS INC,LAKE HOPATCONG,NJ 07849

[2] RUTGERS UNIV,DEPT ELECT & COMP ENGN,PISCATAWAY,NJ 08855

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.47.13933

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of thermally induced in-plane uniaxial strain on the optical properties of a GaAs/AlxGa1-xAs multiple quantum well (MQW) has been studied in detail. The strain was produced by bonding the MQW thin films to LiTaO3, a transparent substrate which possesses a direction-dependent thermal expansion coefficient. At temperatures different from the bonding temperature we have observed an anisotropy in the optical properties of the MQW due to the strain-induced lowering of its in-plane fourfold rotation symmetry. The anisotropic absorption and birefringence for light incident normal to such a MQW structure have been determined and compared to a theory involving the mixing of the valence subbands.

引用

页码：13933 / 13936

页数：4

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