TWO DIFFERENT TYPES OF ANTIFERROMAGNETIC COUPLINGS AND MAGNETORESISTANCES IN FE/SI MULTILAYERS

被引：20

作者：

INOMATA, K

YUSU, K

SAITO, Y

机构：

[1] Advanced Research Lab, Research and Development Center, Toshiba Corporation, Kawasaki

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 12A期

关键词：

INTERLAYER COUPLING; MAGNETORESISTANCE; MULTILAYERS; TEMPERATURE DEPENDENCE; SEMICONDUCTOR; IRON; SILICON;

D O I：

10.1143/JJAP.33.L1670

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two different types of antiferromagnetic (AF) interlayer couplings as a function of Si layer thickness, t(Si), have been observed in a series of (2.6 nm Fe/t(Si) nm Si)(22) multilayers. One of the AF-couplings was observed at around t(Si)=1.2 nm at room temperature (RT) and changed to ferromagnetic (F) coupling at a low temperature. The other AF coupling was observed for tsi thicker than 1.5 nm With a minimum around t(Si)=2.5 nm, and was almost temperature independent. Negative magnetoresistance has been observed in the multilayers with the AF coupling, and has similar temperature dependence as that of the AF coupling.

引用

页码：L1670 / L1672

页数：3

共 13 条

[1] INTRINSIC AND HEAT-INDUCED EXCHANGE COUPLING THROUGH AMORPHOUS-SILICON [J].