AN ANALYTICAL MODEL FOR THE POWER BIPOLAR-MOS TRANSISTOR

被引：31

作者：

KUO, DS ^{[1
]}

HU, CM ^{[1
]}

SAPP, SP ^{[1
]}

机构：

[1] FAIRCHILD CAMERA & INSTRUMENT,SAN RAFAEL,CA 94903

来源：

关键词：

D O I：

10.1016/0038-1101(86)90128-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1229 / 1237

页数：9

共 16 条

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[3]

Chang M. F., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P278

[4]

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[5]

GAUEN K, 1984, ELECTRONIC DESI 0405, P103

[6]

GHANDHI S, 1977, SEMICONDUCTOR POWER, P110

[7]

Goodman A. M., 1983, International Electron Devices Meeting 1983. Technical Digest, P79

[8]

Hower P. L., 1983, International Electron Devices Meeting 1983. Technical Digest, P87

[9]

HU CM, 1984, IEEE T ELECTRON DEV, V31, P1693

[10]

HWANG KY, 1982, UNPUB