THE MEYER NELDEL RULE AND THE FUNDAMENTAL PREEXPONENTIAL FACTOR IN THE CONDUCTIVITY OF A-SI H

被引:37
作者
DRUSEDAU, T
BINDEMANN, R
机构
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1986年 / 136卷 / 01期
关键词
D O I
10.1002/pssb.2221360157
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:K61 / K64
页数:4
相关论文
共 15 条
[1]  
ANDERSON DA, 1982, PHILOS MAG B, V45, P1, DOI 10.1080/01418618208243899
[2]  
BEYER W, 1984, SEMICONDUCT SEMIMET, V21, P257
[3]   PHOTOINDUCED CHANGES IN THE COEFFICIENT OF THE TEMPERATURE-DEPENDENCE OF THE FERMI LEVEL IN DISCHARGE-PRODUCED AMORPHOUS-SILICON [J].
BULLOT, J ;
GALIN, M ;
GAUTHIER, M ;
BOURDON, B ;
CATHERINE, Y .
JOURNAL DE PHYSIQUE, 1982, 43 (09) :1419-1424
[4]  
Carlson D. E., 1979, Amorphous semiconductors, P287
[5]  
DRUSEDAU T, 1985, UNPUB 13TH P S FOT A
[6]  
FUCHS M, UNPUB
[7]  
GERLACH W, 1984, THESIS TU DRESDEN
[8]   PROPERTIES OF AMORPHOUS SEMICONDUCTING A-SI-H/A-SINX-H MULTILAYER FILMS AND OF A-SINX-H ALLOYS [J].
IBARAKI, N ;
FRITZSCHE, H .
PHYSICAL REVIEW B, 1984, 30 (10) :5791-5799
[9]   ON THE APPLICATION OF THE MEYER-NELDEL RULE TO A-SI-H [J].
IRSIGLER, P ;
WAGNER, D ;
DUNSTAN, DJ .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (34) :6605-6613
[10]  
LEY L, 1984, TOP APPL PHYS, V56, P61