GALVANOMAGNETIC PROPERTIES OF P-CDTE AND P-HG1-XCDXTE

被引：17

作者：

HOSCHL, P ^{[1
]}

MORAVEC, P ^{[1
]}

PROSSER, V ^{[1
]}

KUZEL, R ^{[1
]}

GRILL, R ^{[1
]}

FRANC, J ^{[1
]}

BELAS, E ^{[1
]}

IVANOV, YM ^{[1
]}

机构：

[1] MOSCOW STEEL & ALLOYS INST, MOSCOW, USSR

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 101卷 / 1-4期

关键词：

Galvanomagnetic Properties - Mercury Cadmium Telluride;

D O I：

10.1016/0022-0248(90)91087-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Temperature and field dependences of the Hall coefficient RH and the electric conductivity σ were measured in the temperature region 200-450 K on semi-insulating samples p-CdTe(Cl) and in the region 10-300 K on samples p-Hg1-xCdxTe (x ≈ 0.2.). Relations for RH and σ were determined for the case that light holes and electrons participate in the electrical transport together with heavy holes. Mobilities and Hall factors werer calculated by solving the kinetic equation (difference equation method). A simultaneous analysis of RH and σ yields ionization energies of ≈6 meV and ≈0.50Eg for the Hg vacancy and ≈10 meV for residual acceptors in HgCdTe and a second ionization energy ≈0.5 eV for the Cd vacancy in CdTe. A substantial influence of disorder scattering ΔE ≈ 0.3 eV for heavy holes in HgCdTe was found. © 1989.

引用

页码：822 / 825

页数：4