NUCLEATION AND GROWTH OF CURRENT FILAMENTS IN SEMICONDUCTORS

被引：20

作者：

MAYER, KM ^{[1
]}

HUEBENER, RP ^{[1
]}

RAU, U ^{[1
]}

机构：

[1] UNIV TUBINGEN,INST PHYS,LEHRSTUHL EXPTL PHYS 2,W-7400 TUBINGEN 1,GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 03期

关键词：

D O I：

10.1063/1.345698

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The nucleation and disappearance of current filaments in homogeneously slightly doped semiconductors during avalanche breakdown at low temperatures is quantitatively evaluated in terms of a minimum and maximum value of the filament current. Both values arise from a model based on the power balance in the system. Experimental results obtained by the two-dimensional imaging of the filament configurations in n-GaAs and p-Ge agree quantitatively with the predictions of our power balance model.

引用

页码：1412 / 1416

页数：5

共 9 条

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[3]

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[7]

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[9]

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