IDENTIFIABILITY OF SEMICONDUCTOR DEFECTS FROM LBIC IMAGES

被引：19

作者：

FANG, WF

ITO, K

机构：

[1] Univ of Southern California, Los Angeles, CA

来源：

SIAM JOURNAL ON APPLIED MATHEMATICS | 1992年 / 52卷 / 06期

关键词：

INVERSE PROBLEMS; IDENTIFIABILITY; SEMICONDUCTORS; LBIC;

D O I：

10.1137/0152093

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

The identifiability of defects in a semiconductor from its laser-beam-induced current (LBIC) image is studied. It is shown that the LBIC technique is reliable for detecting any spatial defects in the semiconductor material. Continuous dependence of the current measurements on the spatial defects is proved, and sensitivity is also discussed in certain cases.

引用

页码：1611 / 1626

页数：16

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