OPTICAL-DETECTION OF CHARGE MODULATION IN SILICON INTEGRATED-CIRCUITS USING A MULTIMODE LASER-DIODE PROBE

被引:17
作者
HEMENWAY, BR
HEINRICH, HK
GOLL, JH
XU, Z
BLOOM, DM
机构
关键词
D O I
10.1109/EDL.1987.26654
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:344 / 346
页数:3
相关论文
共 3 条
[1]   MEASUREMENT OF REAL-TIME DIGITAL SIGNALS IN A SILICON BIPOLAR JUNCTION TRANSISTOR USING A NONINVASIVE OPTICAL PROBE [J].
HEINRICH, HK ;
HEMENWAY, BR ;
MCGRODDY, KA ;
BLOOM, DM .
ELECTRONICS LETTERS, 1986, 22 (12) :650-652
[2]  
HEINRICH HK, 1986, APPL PHYS LETT, V48, P1811, DOI 10.1063/1.97040
[3]   NONINVASIVE SHEET CHARGE-DENSITY PROBE FOR INTEGRATED SILICON DEVICES [J].
HEINRICH, HK ;
BLOOM, DM ;
HEMENWAY, BR .
APPLIED PHYSICS LETTERS, 1986, 48 (16) :1066-1068