RESPONSE OF SILICON DETECTORS TO H-1 AND HE-4 IONS

被引：27

作者：

LENNARD, WN ^{[1
]}

WINTERBON, KB ^{[1
]}

机构：

[1] ATOM ENERGY CANADA LTD,CHALK RIVER NUCL LABS,CHALK RIVER K0J 1J0,ONTARIO,CANADA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 24-5卷

关键词：

D O I：

10.1016/S0168-583X(87)80306-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：1035 / 1038

页数：4

共 12 条

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[6] STUDY OF THE ASYMMETRICAL RESPONSE OF SILICON SURFACE-BARRIER DETECTORS TO MEV LIGHT-IONS - APPLICATION TO THE PRECISE ANALYSIS OF LIGHT-IONS ENERGY-SPECTRA .1. HELIUM-IONS [J].

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[7]

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[8] ACCURATE DETERMINATION OF IONIZATION ENERGY IN SEMICONDUCTOR DETECTORS [J].

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[9]

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[10]

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