GROWTH AND CHARACTERISTICS OF GALN ASP-INP DOUBLE HETEROSTRUCTURE LASERS

A horizontal furnace system has been developed for growth by liquid-phase epitaxy of multilayer laser structures consisting of InP and (Ga, In) (As, P) incorporating a number of novel features. Double heterostructure lasers emitting at 1. 3 mu m with threshold current densities as low 900 A/cm**2 have been made. Measurements of the far-field beam angles have allowed the dielectric constant step between the active quaternary and passive layers for lasers emitting at both 1. 15 mu m and 1. 3 mu m, to be deduced. Oxide-insulated stripe-geometry c. w. lasers, operating in a single logitudinal mode, have been made with threshold currents down to 180 mA.