MEMBRANE DESIGN AND PHOTOCURING ENCAPSULATION OF FLATPACK BASED ION-SENSITIVE FIELD-EFFECT TRANSISTORS

被引：52

作者：

MOODY, GJ ^{[1
]}

SLATER, JM ^{[1
]}

THOMAS, JDR ^{[1
]}

机构：

[1] UWIST, DEPT APPL CHEM, REDWOOD BLDG, POB 13, CARDIFF CF1 3XF, WALES

来源：

ANALYST | 1988年 / 113卷 / 01期

关键词：

D O I：

10.1039/an9881300103

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

收藏

页码：103 / 108

页数：6

相关论文

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