ON THE CRYSTAL-GROWTH OF SOLID HE-4 IN THE PRESENCE OF SMALL HE-3-IMPURITY

We discuss the small He-3-impurity effect on the kinetic growth coefficient of solid-liquid He-4 interface. In the presence of He-3 impurity, in contrast with pure He-4, there arises a new additional mechanism of energy dissipation due to the He-3 diffusion processes during the interface growth, resulting in a drastic decrease of the growth coefficient. Such a strong sensitivity to a very small He-3 amount accounts for the anomalies observed in crystal He-4 growth experiments with adding 1-10ppm of He-3.