EQUIVALENT CIRCUIT OF AN ARBITRARILY DOPED FIELD-EFFECT TRANSISTOR

[1] [Anonymous], IEEE T ELECT DEVICES

[2] HURLEY RB, 1958, JUNCTION TRANSISTOR, P241

[3] BASIC LIMITS ON THE PROPERTIES OF FIELD-EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (05) : 539 - 542

[4] RICHER I, 1964, PROPERTIES ARBITRARI

[5] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1365 - 1376

[6] SMALL-SIGNAL HIGH-FREQUENCY THEORY OF FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (04) : 128 - +

[1] [Anonymous], IEEE T ELECT DEVICES

[2] HURLEY RB, 1958, JUNCTION TRANSISTOR, P241

[3] BASIC LIMITS ON THE PROPERTIES OF FIELD-EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (05) : 539 - 542

[4] RICHER I, 1964, PROPERTIES ARBITRARI

[5] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1365 - 1376

[6] SMALL-SIGNAL HIGH-FREQUENCY THEORY OF FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (04) : 128 - +