THEORY OF ELECTRIC FIELD-INDUCED OPTICAL MODULATION IN SINGLE AND MULTIQUANTUM WELL STRUCTURES USING A MONTE-CARLO APPROACH

被引：12

作者：

SINGH, J

HONG, S

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1986年 / 22卷 / 10期

关键词：

D O I：

10.1109/JQE.1986.1072886

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2017 / 2021

页数：5

共 16 条

[1] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J].

ARTHUR, JR .

SURFACE SCIENCE, 1974, 43 (02) :449-461

[2] ELECTRONIC-STRUCTURE OF AN ISOLATED GAAS-GAALAS QUANTUM WELL IN A STRONG ELECTRIC-FIELD [J].

AUSTIN, EJ ;

JAROS, M .

PHYSICAL REVIEW B, 1985, 31 (08) :5569-5572

[3] VARIATIONAL CALCULATIONS ON A QUANTUM WELL IN AN ELECTRIC-FIELD [J].

BASTARD, G ;

MENDEZ, EE ;

CHANG, LL ;

ESAKI, L .

PHYSICAL REVIEW B, 1983, 28 (06) :3241-3245

[4] EXCITON BINDING-ENERGY IN QUANTUM WELLS [J].

BASTARD, G ;

MENDEZ, EE ;

CHANG, LL ;

ESAKI, L .

PHYSICAL REVIEW B, 1982, 26 (04) :1974-1979

[5]

BONFILS JF, 1981, P INT C METALORGANIC

[6] GROWTH OF III-V SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY AND THEIR PROPERTIES [J].

CHO, AY .

THIN SOLID FILMS, 1983, 100 (04) :291-317

[7]

Dingle R, 1975, FESTKORPERPROBLEME, V15, P21

[8]

GOODHUE WD, 1985, 6TH MBE WORKSH MINN

[9] ENERGY-LEVELS OF WANNIER EXCITONS IN GAAS-GA1-XALXAS QUANTUM-WELL STRUCTURES [J].

GREENE, RL ;

BAJAJ, KK ;

PHELPS, DE .

PHYSICAL REVIEW B, 1984, 29 (04) :1807-1812

[10]

LANDAU LD, 1981, QUANTUM MECHANICS, pCH7

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