LOW-TEMPERATURE LIQUID-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF ALXGA1-XAS

被引：4

作者：

CHAKRAVARTY, S

ARORA, BM

SRIVASTAVA, AK

SUBRAMANIAN, S

ANAND, S

机构：

[1] Tata Inst of Fundamental Research, India

来源：

THIN SOLID FILMS | 1988年 / 163卷

关键词：

Hall Effect - Photoluminescence - Semiconducting Films - Tin and Alloys;

D O I：

10.1016/0040-6090(88)90462-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Undoped AlxGa1-xAs (0 xGa1-xAs (0.15 15 cm-3, which does not change significantly on cooling to liquid nitrogen temperature. In contrast, for tin-doped samples free electron concentrations greater than 1017 cm-3 have been obtained at room temperature over the entire composition range. A large carrier freeze-out occurs on cooling these samples to liquid nitrogen temperature. Deep level transient spectroscopy measurements on Ti-Au Schottky devices fabricated on the samples show a tin-related DX peak.

引用

页码：443 / 446

页数：4