MOLECULAR LAYER EPITAXY OF SILICON

被引：79

作者：

NISHIZAWA, J ^{[1
]}

AOKI, K ^{[1
]}

SUZUKI, S ^{[1
]}

KIKUCHI, K ^{[1
]}

机构：

[1] SEMICOND RES INST,RES DEV CORP JAPAN,NISHIZAWA PERFECT CRYSTAL PROJECT,KAWAUCHI,SENDAI 980,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 99卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90571-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Si epitaxial layer was successfully grown by molecular layer epitaxy (MLE), where SiH2Cl2 and hydrogen gases were injected alternately. Monomolecular layer growth was studied as a function of pressure, the gas injection/evacuation time duration and the substrate temperature. The substrate temperature of 825-815°C fulfilled the condition for monomolecular layer growth on the (100) surface, and 890-910°C for growth on the (111) surface, where the film thickness per cycle is saturated at a molecular thickness and does not depend on the SiH2Cl2 injection pressure. With the alternative injection of SiHCl3 and H2 gases, no film growth was obtained. From the results of mass spectroscopic measurement, as the main surface adsorbed species in the Si-Cl-H system, SiCl2 was inferred. © 1990.

引用

页码：502 / 505

页数：4