SCANNING TUNNELING MICROSCOPE OBSERVATION OF THE METAL-ADSORBED LAYERED SEMICONDUCTOR SURFACES

被引：6

作者：

ABE, H

KATAOKA, K

UENO, K

KOMA, A

机构：

[1] Department of Chemistry, The University of Tokyo, Tokyo, 113, 7-3-1 Hongo, Bunkyo-ku

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 6B期

关键词：

MOS2; METAL ADSORPTION; SN; NA; STM;

D O I：

10.1143/JJAP.34.3342

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two metal elements, Sn and Na, have been deposited onto layered semiconductor MoS2(0001) surfaces and observed with a scanning tunneling microscope. The metal-adsorbed area shows a very large dark spot (3-5nm diameter) when the sample bias is positive, and the atomic image of the MoS2 substrate can be clearly seen inside the dark area. The same area, on the other hand, shows a bright horseshoe-shaped spot when the sample bias is negative.

引用

页码：3342 / 3345

页数：4

共 5 条

[1]

ELECTRONIC-STRUCTURE OF MOSE2, MOS2, AND WSE2 .1. BAND-STRUCTURE CALCULATIONS AND PHOTOELECTRON-SPECTROSCOPY [J].