PREPARATION OF THIN FILMS OF VANADIUM (DI- SESQUI- AND PENT-) OXIDE

[1] SEMICONDUCTOR-TO-METAL TRANSITION IN V2O3 [J]. PHYSICAL REVIEW LETTERS, 1964, 12 (25) : 700 - +

[2] EFFECT OF PRESSURE ON METAL-TO-INSULATOR TRANSITION IN V2O3 [J]. PHILOSOPHICAL MAGAZINE, 1962, 7 (78) : 961 - +

[3] ANISOTROPY OF THE ELECTRICAL CONDUCTIVITY OF VO(2) SINGLE CRYSTALS [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (09) : 275 - 277

[4] REACTIVELY SPUTTERED VANADIUM DIOXIDE THIN FILMS [J]. APPLIED PHYSICS LETTERS, 1967, 10 (07) : 199 - &

[5] GELD PV, 1960, RUSS J INORG CHEM, V5, P815

[6] ELECTRICAL CONDUCTIVITY ANOMALY IN VANADIUM SESQUIOXIDE [J]. PHYSICAL REVIEW LETTERS, 1962, 9 (07) : 305 - +

[7] GUGGENHEIM HJ, TO BE PUBLISHED

[8] ELECTRICAL CONDUCTIVITY OF VANADIUM OXIDES [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1963, 18 (12) : 1839 - +

[9] KOIDA S, 1966, J PHYS SOC JPN, V22, P46

[10] PHASE DIAGRAM AND MAGNETISM OF V2O3-V2O5 SYSTEM [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1963, 18 (02) : 318 - &

[1] SEMICONDUCTOR-TO-METAL TRANSITION IN V2O3 [J]. PHYSICAL REVIEW LETTERS, 1964, 12 (25) : 700 - +

[2] EFFECT OF PRESSURE ON METAL-TO-INSULATOR TRANSITION IN V2O3 [J]. PHILOSOPHICAL MAGAZINE, 1962, 7 (78) : 961 - +

[3] ANISOTROPY OF THE ELECTRICAL CONDUCTIVITY OF VO(2) SINGLE CRYSTALS [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (09) : 275 - 277

[4] REACTIVELY SPUTTERED VANADIUM DIOXIDE THIN FILMS [J]. APPLIED PHYSICS LETTERS, 1967, 10 (07) : 199 - &

[5] GELD PV, 1960, RUSS J INORG CHEM, V5, P815

[6] ELECTRICAL CONDUCTIVITY ANOMALY IN VANADIUM SESQUIOXIDE [J]. PHYSICAL REVIEW LETTERS, 1962, 9 (07) : 305 - +

[7] GUGGENHEIM HJ, TO BE PUBLISHED

[8] ELECTRICAL CONDUCTIVITY OF VANADIUM OXIDES [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1963, 18 (12) : 1839 - +

[9] KOIDA S, 1966, J PHYS SOC JPN, V22, P46

[10] PHASE DIAGRAM AND MAGNETISM OF V2O3-V2O5 SYSTEM [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1963, 18 (02) : 318 - &