DUAL-WAVELENGTH DEMULTIPLEXING INGAASP PHOTO-DIODE

被引：28

作者：

CAMPBELL, JC

LEE, TP

DENTAI, AG

BURRUS, CA

机构：

[1] Bell Laboratories, Crawford Hill Laboratory, Holmdel

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 06期

关键词：

D O I：

10.1063/1.90812

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the successful operation of a new photodiode structure capable of detecting and demultiplexing two wavelength bands simultaneously. Wavelength discrimination is achieved with a multilayer structure that incorporates p-n junctions in two InxGa1-xAsyP1-y layers having different band gaps. In initial devices crosstalk" between the photoresponses is less than -10 dB at each response peak."

引用

页码：401 / 402

页数：2

共 10 条

[1] PULSE ELECTROPLATING OF HIGH-RESISTANCE MATERIALS, POORLY CONTACTED DEVICES, AND EXTREMELY SMALL AREAS [J].