EFFECT OF EXTERNAL BIAS-FIELD ON L-ALANINE-DOPED TGS

被引：6

作者：

ISHIDA, H

IMAI, K

机构：

[1] Ishikawa College of Technology, Tsubata-machi, Ishikawa-ken

来源：

FERROELECTRICS | 1990年 / 106卷

关键词：

D O I：

10.1080/00150199008214602

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the influence of the external bias field Eext on L-alanine doped triglycine sulfate (LATGS) which is biased permanently by a strong internal bias field Eint. The dielectric behavior of LATGS is similar to those of TGS, when the Eext is applied on LATGS so that the induced Eint is cancelled. A brief consideration on the experimental results is given from the statistical point of view. © 1990, Taylor & Francis Group, LLC. All rights reserved.

引用

页码：315 / 320

页数：6