RELATION BETWEEN OXIDE THICKNESS AND THE BREAKDOWN VOLTAGE OF A PLANAR JUNCTION WITH FIELD RELIEF ELECTRODE

被引：22

作者：

ONEIL, VP

ALONAS, PG

机构：

[1] Motorola Semiconductor Products, Inc., Phoenix

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 07期

关键词：

D O I：

10.1109/T-ED.1979.19552

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A semitheoretical relationship has been developed between the surface breakdown of a planar junction protected by an overlaying field plate and its description in terms of resistivity and oxide thickness This has been confirmed experimentally on p+-n diodes in 45–Ω cm material for a wide range of oxide thicknesses. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：1098 / 1100

页数：3