GETTERING PROPERTIES OF PRO2 IN IN0.53GA0.47AS LPE GROWTH

被引：22

作者：

NOVAK, J ^{[1
]}

HASENOHRL, S ^{[1
]}

KULIFFAYOVA, M ^{[1
]}

OSWALD, J ^{[1
]}

机构：

[1] CZECHOSLOVAK ACAD SCI, INST PHYS, CS-18040 PRAGUE, CZECHOSLOVAKIA

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 110卷 / 04期

关键词：

D O I：

10.1016/0022-0248(91)90644-K

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Praseodymium oxide was used for the gettering of background impurities from the melt, during In0.53Ga0.47As/InP LPE growth. The low amount of PrO2 in the growth solution enables one to prepare n-type In0.53Ga0.47As epitaxial layers with electron concentration in the range of 2 x 10(14) to 2 x 10(16) cm-3 and electron mobilities of 11,000 and 8400 cm2/V . s, respectively. These results were achieved without long time baking of the melt; homogenization lasted only 1 h. The electrical parameters and photoluminescence spectra of the grown layers are presented.

引用

页码：862 / 866

页数：5

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